Display device

ABSTRACT

A display device may include: a substrate; first and second electrode on the substrate; light emitting element between the first and second electrodes; a barrier structure on the substrate and including a first surface, a second surface, and a third surface; a light conversion layer on the barrier structure; and a passivation layer on the light conversion layer. A first space defined by the second and third surfaces may be between the substrate and the barrier structure. A second space defined by the first and second surfaces may be between the barrier structure and the passivation layer. The first and second spaces may be alternately located in the first direction. The light emitting element may be in the first space. The light conversion layer may be in the at least one second space.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of U.S. patent application Ser. No.16/857,000, filed Apr. 23, 2020, which claims priority to and thebenefit of Korean patent application number 10-2019-0116130, filed onSep. 20, 2019, the entire disclosure of each of which is incorporatedherein by reference.

BACKGROUND 1. Field

Various embodiments of the present disclosure relate to a displaydevice, and, for example, to a display device including a light emittingelement.

2. Description of Related Art

A display device may use a light emitting element such as a lightemitting diode as a light source of a pixel to display an image. Thelight emitting diode may maintain relatively suitable or satisfactorydurability even under poor environmental conditions, and be excellent interms of lifetime and luminance.

Recently, research on the technology of fabricating a light emittingdiode using material having a high-reliability inorganic crystallinestructure, and utilizing the light emitting diode on a panel of a lightemitting display device to use it as a next generation pixel lightsource has become more active. As a part of such research, developmentof a light emitting display device using, as a light source of eachpixel, a light emitting diode fabricated in a small size correspondingto the micro scale or the nano scale is ongoing.

SUMMARY

Various embodiments of the present disclosure are directed to a displaydevice capable of improving the efficiency at which light emitted from alight emitting element is incident on a light conversion layer.

The effects of the subject matter of the present disclosure are notlimited to the above-stated effects, and those skilled in the art willclearly understand other not explicitly mentioned effects from theaccompanying claims.

An embodiment of the present disclosure may provide a display deviceincluding: a substrate; a first electrode and a second electrode on thesubstrate and spaced apart from each other in a first direction; a lightemitting element between the first electrode and the second electrode; abarrier structure on the substrate and including a first surface, asecond surface, and a third surface; a light conversion layer on thebarrier structure; and a passivation layer on the light conversionlayer. A first space defined by the second surface and the third surfacemay be between the substrate and the barrier structure. A second spacedefined by the first surface and the second surface may be between thebarrier structure and the passivation layer. The first space and thesecond space may be alternately located in the first direction. Thelight emitting element may be in the first space. The light conversionlayer may be in the at least one second space.

In an embodiment, the third surface may have a hole overlapping thelight emitting element.

In an embodiment, the display device may further include a color filteron the light conversion layer.

In an embodiment, the light conversion layer may include a base resinand wavelength conversion particles dispersed in the base resin.

In an embodiment, the light conversion layer may further include lightscattering particles dispersed in the base resin.

In an embodiment, the first surface may be closer to the substrate thanis the third surface, and the first surface and the third surface may bealternately arranged in the first direction.

In an embodiment, the second surface may be between the first surfaceand the third surface and couple the first surface with the thirdsurface.

In an embodiment, the first space may be sealed by the substrate, thebarrier structure, and the passivation layer and filled with air.

In an embodiment, the display device may further include an anchoredpattern in the first space. The light emitting element may be fixedbetween the substrate and the anchored pattern.

In an embodiment, the display device may further include a lightshielding pattern located along the second surface in the second spacein which the light conversion layer is not included. The light shieldingpattern may include metal.

In an embodiment, the display device may further include a black matrixin the second space in which the light conversion layer is not included.The black matrix may be configured to absorb and block incident light.

An embodiment of the present disclosure may provide a display deviceincluding: a substrate; a first electrode and a second electrode on thesubstrate and spaced apart from each other in a first direction; a lightemitting element between the first electrode and the second electrode; alight conversion layer on the substrate; and a barrier structure on thesubstrate and including a first surface, a second surface, and a thirdsurface. A first space defined by the second surface and the thirdsurface may be between the substrate and the barrier structure. A secondspace defined by the first surface and the second surface may be in thebarrier structure. The first space and the second space may bealternately located in the first direction. The light conversion layermay be in the first space. The light emitting element may be in the atleast one second space.

In an embodiment, the first surface may expose at least a portion of thefirst electrode and at least a portion of the second electrode, and havea first hole overlapping the light emitting element.

In an embodiment, the third surface may have a second hole overlappingthe light conversion layer.

In an embodiment, the display device may further include a passivationlayer on the barrier structure, and a color filter on the passivationlayer.

In an embodiment, the light conversion layer may include a base resin,wavelength conversion particles dispersed in the base resin, and lightscattering particles dispersed in the base resin.

In an embodiment, the first surface may be closer to the substrate thanis the third surface, and the first surface and the third surface may bealternately arranged in the first direction.

In an embodiment, the second surface may be between the first surfaceand the third surface and couple the first surface with the thirdsurface.

In an embodiment, the display device may further include a lightshielding pattern located along the second surface in the second spacein which the light emitting element is not included. The light shieldingpattern may include metal.

In an embodiment, the display device may further include a black matrixoverlapping the second space in which the light emitting element is noton the barrier structure. The black matrix may be configured to absorband block incident light.

More details of various embodiments are included in the detaileddescriptions and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, together with the specification, illustrateembodiments of the subject matter of the present disclosure, and,together with the description, serve to explain principles ofembodiments of the subject matter of the present disclosure.

FIGS. 1A and 1B are perspective views illustrating a light emittingelement in accordance with an embodiment of the present disclosure.

FIG. 2 is a plan view schematically illustrating a display device inaccordance with an embodiment of the present disclosure.

FIGS. 3A and 3B are circuit diagrams each illustrating a pixel inaccordance with an embodiment of the present disclosure.

FIG. 4 is a circuit diagram illustrating a pixel in accordance with anembodiment of the present disclosure.

FIG. 5 is a plan view illustrating a pixel unit in accordance with anembodiment of the present disclosure.

FIG. 6 is a schematic sectional view illustrating the pixel unit inaccordance with an embodiment, taken along line A-A′ of FIG. 5 .

FIGS. 7 to 9 are sectional views of a pixel unit in accordance withvarious embodiments, corresponding to line A-A′ of FIG. 5 .

FIG. 10 is a plan view illustrating a pixel unit in accordance with anembodiment of the present disclosure.

FIG. 11 is a schematic sectional view illustrating the pixel unit inaccordance with an embodiment, taken along line B-B′ of FIG. 10 .

FIGS. 12 and 13 are sectional views of a pixel unit in accordance withvarious embodiments, corresponding to line B-B′ of FIG. 10 .

DETAILED DESCRIPTION

Features of the subject matter of the present disclosure, and methodsfor achieving the same will be clearer with reference to embodimentsdescribed herein below in more detail together with the accompanyingdrawings. The subject matter of the present disclosure may, however, beembodied in many different forms and should not be construed as beinglimited to the embodiments set forth herein. Rather, these embodimentsare provided so that this disclosure will be thorough and complete andwill fully convey the concept of the present disclosure to those skilledin the art, and the present disclosure will only be defined by theappended claims, and equivalents thereof.

It will be understood that when an element or a layer is referred to asbeing “on” another element or a layer, it can be directly on, connectedto, or coupled to the other element or the layer, or one or moreintervening elements or layers may be present. Like reference numeralsrefer to like elements throughout.

It will be understood that, although the terms “first”, “second”, etc.may be used herein to describe various elements, these elements shouldnot be limited by these terms. These terms are only used to distinguishone element from another element. For instance, a first elementdiscussed herein below could be termed a second element withoutdeparting from the spirit and scope of the present disclosure. In thepresent disclosure, the singular forms are intended to include theplural forms as well, unless the context clearly indicates otherwise.

Some elements which are not directly related to the features of thepresent disclosure in the drawings may be omitted to clearly explain thesubject matter of the present disclosure. Furthermore, the sizes,ratios, etc. of some elements in the drawings may be slightlyexaggerated. It should be noted that the same reference numerals areused to designate the same or similar elements throughout the drawings,and duplicative explanation thereof will not be repeated.

Hereinafter, embodiments of the present disclosure will be described inmore detail with reference to the accompanying drawings.

FIGS. 1A and 1B are perspective views illustrating a light emittingelement LD in accordance with an embodiment of the present disclosure.

Referring to FIGS. 1A and 1B, the light emitting element LD inaccordance with an embodiment of the present disclosure may include afirst semiconductor layer 11, a second semiconductor layer 13, and anactive layer 12 interposed between the first and second semiconductorlayers 11 and 13. For example, the light emitting element LD may beimplemented as a stack formed by successively stacking the firstsemiconductor layer 11, the active layer 12, and the secondsemiconductor layer 13.

In an embodiment of the present disclosure, the light emitting elementLD may be provided in the form of a rod extending in one direction. Ifthe direction in which the light emitting element LD extends is definedas a longitudinal direction, the light emitting element LD may have afirst end EP1 and a second end EP2 with respect to the longitudinaldirection.

In an embodiment, one of the first and second semiconductor layers 11and 13 may be on the first end EP1, and the other of the first andsecond semiconductor layers 11 and 13 may be on the second end EP2. Forexample, the first semiconductor layer 11 may be on the first end EP1,and the second semiconductor layer 13 may be on the second end EP2.

In an embodiment of the present disclosure, the light emitting elementLD may be provided in the form of a rod. Here, the term “rod type”embraces a rod-like shape and a bar-like shape such as a cylindricalshape and a prismatic shape extending in the longitudinal direction(e.g., to have an aspect ratio greater than 1). For example, the lengthof the light emitting element LD may be greater than the diameterthereof. However, the present disclosure is not limited thereto. Forexample, the light emitting element LD may be a light emitting elementhaving a core-shell structure.

The light emitting element LD may be fabricated to have a small sizehaving a diameter and/or length corresponding to, e.g., a micro-scale ornano-scale size. For example, the diameter of the light emitting elementLD may be equal to or less than 600 nm, and the length of the lightemitting element LD may be equal to or less than 4 μm. However, the sizeof the light emitting element LD is not limited thereto. For instance,the size of the light emitting element LD may be changed to meetrequirements of the display device to which the light emitting elementLD is applied.

The first semiconductor layer 11 may include, for example, at least onen-type semiconductor layer. For instance, the first semiconductor layer11 may include a semiconductor layer which includes any onesemiconductor material selected from InAlGaN, GaN, AlGaN, InGaN, AlN,and InN, and is doped with a first dopant such as Si, Ge, or Sn.

The material forming the first semiconductor layer 11 is not limitedthereto, and the first semiconductor layer 11 may be formed of variousother suitable materials.

The active layer 12 may be formed on the first semiconductor layer 11and have a single or multiple quantum well structure. The active layer12 may emit light having a wavelength in a range from 400 nm to 900 nm,and use a double heterostructure. In an embodiment of the presentdisclosure, a cladding layer doped with a dopant may be formed on and/orunder the active layer 12. For example, the cladding layer may be formedof an ALGaN layer or an InALGaN layer. In an embodiment, material suchas AlGaN or AlInGaN may also be used to form the active layer 12, andvarious other suitable materials may be used to form the active layer12.

If an electric field having a set or predetermined voltage or more isapplied to the opposite ends of the light emitting element LD, the lightemitting element LD emits light by coupling of electron-hole pairs inthe active layer 12. Because light emission of the light emittingelement LD can be controlled based on the foregoing principle, the lightemitting element LD may be used as a light source of various suitablelight emitting devices as well as a pixel of the display device.

The second semiconductor layer 13 may be provided on the active layer 12and include a semiconductor layer of a type (or kind) different fromthat of the first semiconductor layer 11. For example, the secondsemiconductor layer 13 may include at least one p-type semiconductorlayer. For instance, the second semiconductor layer 13 may include asemiconductor layer which includes any one semiconductor materialselected from InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, and is dopedwith a second dopant such as Mg. The material forming the secondsemiconductor layer 13 is not limited thereto, and the secondsemiconductor layer 13 may be formed of various other suitablematerials.

In an embodiment of the present disclosure, the light emitting elementLD may not only include the first semiconductor layer 11, the activelayer 12, and the second semiconductor layer 13, but may also include afluorescent layer, another active layer, another semiconductor layer,and/or an electrode layer provided on and/or under each layer.

In an embodiment, the light emitting element LD may further include atleast one electrode layer on one side (e.g., an upper surface) of thesecond semiconductor layer 13 or one side (e.g., a lower surface) of thefirst semiconductor layer 11. For example, as illustrated in FIG. 1B,the light emitting element LD may further include an electrode layer 15on one side of the second semiconductor layer 13. The electrode layer 15may be an ohmic contact electrode, but it is not limited thereto.Furthermore, the electrode layer 15 may include metal or a metal oxide.For example, chrome (Cr), titanium (Ti), aluminum (Al), gold (Au),nickel (Ni), ITO, and an oxide or alloy thereof may be used alone or incombination with each other. However, the present disclosure is notlimited to this. In an embodiment, the electrode layer 15 may besubstantially transparent or translucent. Thereby, light generated fromthe light emitting element LD may be emitted to the outside afterpassing through the electrode layer 15.

The light emitting element LD may further include an insulating film 14.However, in an embodiment of the present disclosure, the insulatinglayer 14 may be omitted, or may be provided to cover only some of thefirst semiconductor layer 11, the active layer 12, and the secondsemiconductor layer 13. For example, the insulating film 14 may beprovided on a portion of the light emitting element LD, other than theopposite ends thereof, so that the opposite ends of the light emittingelement LD are exposed.

For the sake of explanation, FIGS. 1A and 1B illustrate the insulatinglayer 14 a portion of which has been removed. The entirety of the sidesurface of the light emitting element LD may be enclosed by theinsulating layer 14.

In an embodiment of the present disclosure, the insulating layer 14 mayinclude a transparent insulating material. For example, the insulatinglayer 14 may include at least one or more insulating materials amongSiO₂, Si₃N₄, Al₂O₃, and TiO₂, but it is not limited thereto. In otherwords, various suitable materials having insulation properties may beemployed.

The insulating layer 14 may prevent the active layer 12 fromshort-circuiting as a result of electrical contact with a conductivematerial except the first semiconductor 11 and the second semiconductorlayer 13 (or reduce a likelihood or occurrence of such a short-circuit).As a result of the presence of the insulating layer 14, occurrence of adefect on the surface of the light emitting element LD may be minimizedor reduced, whereby the lifetime and efficiency of the light emittingelement LD may be improved. In the case where a plurality of lightemitting elements LD are in close contact (e.g., direct or physicalcontact) with each other, the insulating layer 14 may prevent anundesired short-circuit from occurring between the light emittingelements LD (or may reduce a likelihood or occurrence of such ashort-circuit).

The type (or kind), the structure, the shape, etc. of the light emittingelement LD in accordance with an embodiment of the present disclosuremay be changed in various suitable ways.

FIG. 2 is a plan view schematically illustrating the display device 1000in accordance with an embodiment of the present disclosure.

Referring to FIGS. 1A to 2 , the display device 1000 may include asubstrate SUB, and a plurality of pixels PXL provided on the substrateSUB. In more detail, the display device 1000 may include a display areaDA configured to display an image, and a non-display area NDA formed ina set or predetermined area other than the display area DA.

The display area DA may be an area in which the pixels PXL are provided.The non-display area NDA may be an area in which drivers for driving thepixels PXL and various suitable lines for coupling the pixels PXL to thedrivers are provided.

The display area DA may have various suitable shapes. For example, thedisplay area DA may be provided in various suitable forms such as aclosed polygon including sides formed of linear lines, a circle, anellipse or the like including a side formed of a curved line, and asemicircle, a semi-ellipse or the like including sides formed of alinear line and a curved line.

In the case where the display area DA includes a plurality of areas,each area may be provided in various suitable forms such as a closedpolygon including linear sides, and a semicircle, a semi-ellipse or thelike including sides formed of a curved line. The surface areas of theplurality of areas may be the same as or different from each other.

In an embodiment of the present disclosure, there will be described anexample in which the display area DA is provided with a single areahaving a rectangular shape including linear sides.

The non-display area NDA may be provided on at least one side of thedisplay area DA. In an embodiment of the present disclosure, thenon-display area NDA may enclose the display area DA.

The pixels PXL may be in the display area DA on the substrate SUB. Eachof the pixels PXL may include at least one light emitting element LDconfigured to be driven in response to a corresponding scan signal and acorresponding data signal.

The pixels PXL each may include a light emitting element which emitswhite light and/or color light. Each pixel PXL may emit light having anyone color selected from among red, green, and blue, and it is notlimited thereto. For example, each pixel PXL may emit light having anyone color selected from among cyan, magenta, yellow, and white.

In more detail, the pixels PXL may include a first pixel PXL1 configuredto emit light having a first color, a second pixel PXL2 configured toemit light having a second color different from the first color, and athird pixel PXL3 configured to emit light having a third color differentfrom the first color or the second color. At least one first pixel PXL1,at least one second pixel PXL2, and at least one third pixel PXL3 thatare adjacent to each other may form one pixel unit PXU which may emitlight having various suitable colors.

In an embodiment, the first pixel PXL1 may be a red pixel which emitsred light, a second pixel PXL2 may be a green pixel which emits greenlight, and a third pixel PXL3 may be a blue light which emits bluelight. In an embodiment, the first pixel PXL1, the second pixel PXL2,and the third pixel PXL3 may include, as light sources, a light emittingelement related to the first color, a light emitting element related tothe second color, and a light emitting element related to the thirdcolor, so that the pixels may respectively emit light having the firstcolor, light having the second color, and light having the third color.In an embodiment, the first pixel PXL1, the second pixel PXL2, and thethird pixel PXL3 may respectively include light emitting elements havingthe same or substantially the same color, and light conversion layershaving different colors are on the respective light emitting elements sothat the pixels may respectively emit light having the first color,light having the second color, and light having the third color.

However, the colors, the types (or kinds), and/or the number of pixelsPXL that form each pixel unit PXU are not particularly limited.

The pixels PXL may be arranged in a matrix form having rows and columnsextending in a first direction DR1 and a second direction DR2intersecting the first direction DR1. However, the arrangement of thepixels PXL is not limited to a particular arrangement. In other words,the pixels PXL may be arranged in various suitable forms.

The drivers may provide signals to the pixels PXL through the lines, andthus, control the operation of the pixels PXL. In FIG. 2 , the lines areomitted for the sake of explanation.

The drivers may include a scan driver SDV configured to provide scansignals to the pixels PXL through scan lines, an emission driver EDVconfigured to provide emission control signals to the pixels PXL throughemission control lines, a data driver DDV configured to provide datasignals to the pixels PXL through data lines, and a timing controller.The timing controller may control the scan driver SDV, the emissiondriver EDV, and the data driver DDV.

In an embodiment, each of the pixels PXL may be formed of an activepixel. However, the types (or kinds), structures, and/or driving schemesof the pixels PXL capable of being applied to the present disclosure arenot particularly limited.

FIGS. 3A and 3B are circuit diagrams each illustrating a pixel inaccordance with an embodiment of the present disclosure. For example,FIGS. 3A and 3B illustrate examples of a pixel that forms an activeemission display panel.

Referring to FIG. 3A, each of the pixels PXL may include at least onelight emitting element LD, and a pixel driving circuit DC which iscoupled to the light emitting element LD and configured to drive thelight emitting element LD.

A first electrode (e.g., an anode electrode) of the light emittingelement LD may be coupled to a first driving power supply VDD via thepixel driving circuit DC. A second electrode (e.g., a cathode electrode)of the light emitting element LD may be coupled to a second drivingpower supply VSS.

The first driving power supply VDD and the second driving power supplyVSS may have different potentials. For example, the second driving powersupply VSS may have a potential lower than that of the first drivingpower supply VDD by a value equal to or greater than a threshold voltageof the light emitting element LD.

The light emitting element LD may emit light at a luminancecorresponding to driving current which is controlled by the pixeldriving circuit DC.

Although FIG. 3A illustrates an embodiment in which each of the pixelsPXL includes only one light emitting element LD, the present disclosureis not limited thereto. For example, each of the pixels PXL may includea plurality of light emitting elements coupled in parallel and/or seriesto each other.

In an embodiment of the present disclosure, the pixel driving circuit DCmay include a first transistor M1, a second transistor M2, and a storagecapacitor Cst. The structure of the pixel driving circuit DC is notlimited to that of the embodiment illustrated in FIG. 3A. In anembodiment, each of the pixels PXL may further include a pixel sensingcircuit. The pixel sensing circuit may measure a driving current valueof each of the pixels PXL, and transmit the driving current value to anexternal circuit (e.g., a timing controller) so that the pixel PXL maybe compensated for.

The first transistor (switching transistor) M1 may include a firstelectrode coupled to a data line DL, and a second electrode coupled to afirst node N1. Here, the first electrode and the second electrode of thefirst transistor M1 may be different electrodes. For example, if thefirst electrode is a source electrode, the second electrode is a drainelectrode. A gate electrode of the first transistor M1 may be coupled toa scan line SL.

When a scan signal having a voltage (e.g., a gate-on voltage) capable ofturning on the first transistor M1 is supplied from the scan line SL,the first transistor M1 is turned on to electrically couple the dataline DL with the first node N1. Here, a data signal of a correspondingframe is supplied to the data line DL, whereby the data signal may betransmitted to the first node N1. The data signal transmitted to thefirst node N1 may be stored in the storage capacitor Cst.

The second transistor (driving transistor) M2 may include a firstelectrode coupled to the first driving power supply VDD, and a secondelectrode electrically coupled to a first electrode (e.g., an anodeelectrode) of the light emitting element LD. A gate electrode of thesecond transistor M2 may be coupled to the first node N1. As such, thesecond transistor M2 may control the amount of driving current to besupplied to the light emitting element LD in response to the voltage ofthe first node N1.

The storage capacitor Cst may include a first electrode coupled to thefirst driving power supply VDD, and a second electrode coupled to thefirst node N1. The storage capacitor Cst may be charged with a voltagecorresponding to a data signal supplied to the first node N1, andmaintain the charged voltage until a data signal of a subsequent frameis supplied.

For the sake of explanation, FIG. 3A illustrates a driving circuit DChaving a relatively simple structure including the first transistor M1configured to transmit a data signal to the pixel PXL, the storagecapacitor Cst configured to store the data signal, and the secondtransistor M2 configured to supply driving current corresponding to thedata signal to the light emitting element LD.

However, the present disclosure is not limited thereto, and thestructure of the pixel circuit DC may be changed in various suitableways. For example, the driving circuit DC may further include at leastone transistor such as a transistor configured to compensate for thethreshold voltage of the second transistor M2, a transistor configuredto initialize the first node N1, and/or a transistor configured tocontrol an emission time of the light emitting element LD, or othercircuit elements such as a boosting capacitor for boosting the voltageof the first node N1.

Furthermore, although in FIG. 3A the transistors, e.g., the first andsecond transistors M1 and M2, included in the driving circuit DC havebeen illustrated as being formed of P-type transistors, the presentdisclosure is not limited to this. In other words, at least one of thefirst and second transistors M1 and M2 included in the driving circuitDC may be changed to an N-type transistor.

For example, referring to FIG. 3B, each of the first and secondtransistors M1 and M2 of the driving circuit DC may be formed of anN-type transistor. The configuration and operation of the drivingcircuit DC illustrated in FIG. 3B, other than a change in connectionpositions of some components due to a change in the type (or kind) oftransistor, are similar to those of the driving circuit DC of FIG. 3A.Therefore, duplicative descriptions thereof will not be repeated here.

FIG. 4 is a circuit diagram illustrating a pixel in accordance with anembodiment of the present disclosure.

Referring to FIG. 4 , each of the pixels PXL in accordance with anembodiment of the present disclosure may include a light emitting deviceLD, first to seventh transistors T1, T2, T3, T4, T5, T6, and T7, and astorage capacitor Cst.

A first electrode (e.g., an anode electrode) of the light emittingelement LD may be coupled to the first transistor T1 via the sixthtransistor T6. A second electrode (e.g., a cathode electrode) of thelight emitting element LD may be coupled to a second driving powersupply VSS. The light emitting element LD may emit light having a set orpredetermined luminance corresponding to current supplied from the firsttransistor T1.

The first transistor (driving transistor) T1 may include a firstelectrode coupled to the first driving power supply VDD via the fifthtransistor T5, and a second electrode coupled to a first electrode ofthe light emitting device LD via the sixth transistor T6. The firsttransistor T1 may control, in response to the voltage of the first nodeN1 that is a gate electrode thereof, current flowing from the firstdriving power supply VDD to the second driving power supply VSS via thelight emitting element LD.

The second transistor (switching transistor) T2 may be coupled between adata line DL and the first electrode of the first transistor T1. A gateelectrode of the second transistor T2 may be coupled to a scan line SL.When a scan signal having a gate-on voltage is supplied to the scan lineSL, the second transistor T2 may be turned on so that the data line DLmay be electrically coupled with the first electrode of the firsttransistor T1.

The third transistor T3 may be coupled between the second electrode ofthe first transistor T1 and the first node N1. A gate electrode of thethird transistor T3 may be coupled to the scan line SL. When a scansignal having a gate-on voltage is supplied to the scan line SL, thethird transistor T3 may be turned on so that the second electrode of thefirst transistor T1 may be electrically coupled with the first node N1.

The fourth transistor T4 may be coupled between the first node N1 and aninitialization power supply Vint. A gate electrode of the fourthtransistor T4 may be coupled to a scan line SL-1 of a preceding stage.When a scan signal having a gate-on voltage is supplied to the scan lineSL-1 of the preceding stage, the fourth transistor T4 is turned on sothat the voltage of the initialization power supply Vint may be suppliedto the first node N1. The initialization power supply Vint may be set toa voltage lower than that of a data signal.

The fifth transistor T5 may be coupled between the first driving powersupply VDD and the first electrode of the first transistor T1. A gateelectrode of the fifth transistor T5 may be coupled to an emissioncontrol line EL. The fifth transistor T5 may be turned on when anemission control signal having a gate-on voltage is supplied to theemission control line EL, and may be turned off in other cases.

The sixth transistor T6 is coupled between the second electrode of thefirst transistor T1 and the first electrode of the light emittingelement LD, together with a node N2 between the sixth transistor T6 andthe first electrode of the light emitting element LD. A gate electrodeof the sixth transistor T6 may be coupled to the emission control lineEL. The sixth transistor T6 may be turned on when an emission controlsignal having a gate-on voltage is supplied to the emission control lineEL, and may be turned off in other cases.

The seventh transistor T7 may be coupled between the initializationpower supply Vint and the first electrode of the light emitting elementLD. A gate electrode of the seventh transistor T7 may be coupled to ascan line SL+1 of a subsequent stage. When a scan signal having agate-on voltage is supplied to the scan line SL+1 of the subsequentstage, the seventh transistor T7 may be turned on so that the voltage ofthe initialization power supply Vint may be supplied to the firstelectrode of light emitting element LD.

The storage capacitor Cst may be coupled between the first driving powersupply VDD and the first node N1. The storage capacitor Cst may store avoltage corresponding both to a data signal and to a threshold voltageof the first transistor T1.

Although in FIG. 4 the transistors, e.g., the first to seventhtransistors T1, T2, T3, T4, T5, T6, and T7, included in the drivingcircuit DC have been illustrated as being formed of P-type transistors,the present disclosure is not limited to this. For example, at least oneof the first to seventh transistors T1, T2, T3, T4, T5, T6, and T7 maybe changed to an N-type transistor.

FIG. 5 is a plan view illustrating a pixel unit in accordance with anembodiment of the present disclosure. FIG. 6 is a schematic sectionalview illustrating the pixel unit, taken along line A-A′ of FIG. 5 .

Although for the sake of explanation each electrode is simplyillustrated as being formed of a single electrode layer, the presentdisclosure is not limited thereto. In an embodiment of the presentdisclosure, the words “components are provided and/or formed on the samelayer” may mean that the components are formed through the same process.

Although for the sake of explanation FIG. 5 illustrates that a pluralityof light emitting elements LD are arranged in the first direction DR1,the arrangement of the light emitting elements LD is not limitedthereto. For example, the light emitting elements LD may be arranged ina diagonal direction between the first and second electrodes ELT1 andELT2.

Referring to FIGS. 1A, 5, and 6 , the display device in accordance withan embodiment may include a substrate SUB, a first electrode ELT1, asecond electrode ELT2, a light emitting element LD, a barrier structureCSL, a light conversion layer LCL, a light shielding pattern SDM, and apassivation layer PSL.

The substrate SUB may be a rigid substrate or a flexible substrate, andthe material or properties thereof are not particularly limited. Forexample, the substrate SUB may be a rigid substrate made of glass orreinforced glass, or a flexible substrate formed of a thin film made ofplastic or metal. Furthermore, the substrate SUB may be a transparentsubstrate, but it is not limited thereto. For instance, the substrateSUB may be a translucent substrate, an opaque substrate, or a reflectivesubstrate.

The substrate SUB may be sectioned into first to third pixel areas PXA1,PXA2, and PXA3 to form pixel area PXA. The first pixel area PXA1 may bean area in which the first pixel PXL1 is located. The second pixel areaPXA2 may be an area in which the second pixel PXL2 is located. The thirdpixel area PXA3 may be an area in which the third pixel PXL3 is located.The first to third pixels PXL1, PXL2, and PXL3 may be successivelyarranged in the first direction DR1 in a pixel unit PXU1. Hence, thefirst to third pixel areas PXA1, PXA2, and PXA3 may also be successivelyarranged in the first direction DR1.

The first electrode ELT1 and the second electrode ELT2 may be on thesubstrate SUB. The first electrode ELT1 and the second electrode ELT2may be on each of the pixel areas PXA of the substrate SUB. Asillustrated in FIG. 5 , the first electrode ELT1 and the secondelectrode ELT2 may be alternately in the first direction DR1. In otherwords, the first electrode ELT1 and the second electrode ELT2 may be onthe substrate SUB at positions spaced apart from each other in the firstdirection DR1 with at least one light emitting element LD therebetween.The first electrode ELT1 and the second electrode ELT2 may extend in thesecond direction DR2.

In an embodiment, the first electrode ELT1 may be electrically coupledto a first end EP1 of each light emitting diode LD. The second electrodeELT2 may be electrically coupled to a second end EP2 of each lightemitting diode LD.

The first electrode ELT1 and the second electrode ELT2 may be on thesame plane and have the same or substantially the same height. If thefirst electrode ELT1 and the second electrode ELT2 have the same orsubstantially the same height, each light emitting element LD may bemore reliably coupled to the first electrode ELT1 and the secondelectrode ELT2.

The first electrode ELT1 and the second electrode ELT2 may be formed ofconductive material. The conductive material may include metal, forexample, Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Ti, and an alloythereof.

Each of the first electrode ELT1 and the second electrode ELT2 may havea single-layer structure, but the present disclosure is not limitedthereto. For example, each of the first electrode ELT1 and the secondelectrode ELT2 may have a multi-layer structure. For example, each ofthe first electrode ELT1 and the second electrode ELT2 may furtherinclude a capping layer formed of a transparent conductive material. Thecapping layer may be located to cover the first electrode ELT1 and thesecond electrode ELT2 so that the first electrode ELT1 and the secondelectrode ELT2 to prevent or reduce damage during a process ofmanufacturing the display device.

The material of the first electrode ELT1 and the second electrode ELT2is not limited to the above-mentioned materials. For example, the firstelectrode ELT1 and the second electrode ELT2 may be made of conductivematerial having a set or predetermined reflectivity. In the case wherethe first electrode ELT1 and the second electrode ELT2 are made ofconductive material having a set or predetermined reflectivity, lightemitted from the opposite ends EP1 and EP2 of the light emitting elementLD may travel in a direction (e.g., a third direction DR3) in which animage is displayed. In other words, the light output efficiency of thedisplay device may be improved.

Any one of the first and second electrodes ELT1 and ELT2 may be an anodeelectrode, and the other may be a cathode electrode. For example, thefirst electrode ELT1 may be a cathode electrode, and the secondelectrode ELT2 may be an anode electrode. However, the presentdisclosure is not limited thereto, and the first electrode ELT1 may bean anode electrode while the second electrode ELT2 may be a cathodeelectrode.

Although for the sake of explanation the first and second electrodesELT1 and ELT2 are illustrated as being directly provided on thesubstrate SUB, the present disclosure is not limited thereto. Forexample, a component (e.g., a pixel circuit layer) for allowing thedisplay device to be driven as a passive matrix or an active matrix maybe further provided between the substrate SUB and the first and secondelectrodes ELT1 and ELT2.

The first electrode ELT1 and the second electrode ELT2 may providedriving signals for driving the corresponding light emitting elementsLD. For example, referring also to FIG. 3A, the first electrode ELT1 andthe second electrode ELT2 may be electrically coupled with any oneselected from the driving circuit DC and the second driving power supplyVSS. The first electrode ELT1 may be electrically coupled with thesecond driving power supply VSS. The second electrode ELT2 may beelectrically coupled with the driving circuit DC. The first electrodeELT1 and the second electrode ELT2 may be respectively coupled to thefirst end EP1 and the second end EP2 of the light emitting element LD sothat the driving signal may be provided to the light emitting elementLD. The light emitting element LD may emit light having a set orpredetermined luminance corresponding to driving current provided fromthe driving circuit DC.

Although for the sake of explanation FIGS. 5 and 6 illustrate that twofirst electrodes ELT1 and two second electrodes ELT2 are in each pixelarea PXA, the numbers of first electrodes ELT1 and second electrodesELT2 that are in each pixel PXA may be changed, as needed or desired.

The light emitting element LD may be provided on the substrate SUB and,for example, between the first electrode ELT1 and the second electrodeELT2. As described herein above, the first end EP1 of the light emittingelement LD may come into contact (e.g., electrical, direct, or physicalcontact) with any one selected from the first electrode ELT1 and thesecond electrode ELT2. The second end EP2 may come into contact (e.g.,electrical, direct, or physical contact) with the other electrode of thefirst electrode ELT1 and the second electrode ELT2. The light emittingelement LD may receive driving current from the first electrode EL1 andthe second electrode ELT2 and emit light having a set or predeterminedluminance corresponding to the provided driving current.

As described herein above, for example, the light emitting elements LDmay be blue light emitting elements which emit light having the same orsubstantially the same color (e.g., blue). However, the presentdisclosure is not limited thereto. The light emitting elements LD may belight emitting elements which emit light having different colors (e.g.,red, green, and blue).

The barrier structure CSL may be provided on the overall area of thesubstrate SUB. The barrier structure CSL may be with an overall uniformor substantially uniform thickness. In an embodiment, the thickness ofthe barrier structure CSL may be 1 μm or less, but the presentdisclosure is not limited thereto.

The barrier structure CSL may be an inorganic layer including aninorganic material. For example, the barrier structure CSL may be formedof any one selected from silicon nitride SiNx, silicon oxide SiOx, andsilicon oxynitride SiOxNy. In an embodiment, the barrier structure CSLmay include an inorganic layer including silicon nitride SiNx.

The barrier structure CSL may be divided into a concave area VA, aconvex area RA, and a connection area CA which couples the concave areaVA with the convex area RA. In an embodiment, the concave area VA andthe convex area RA may be alternately defined in the first directionDR1. The connection area CA may be defined between each concave area VAand the corresponding convex area RA.

The barrier structure CSL may be formed of a first surface S1, a secondsurface S2, and a third surface S3. The first surface S1 may be asurface in the concave area VA. The second surface S2 may be a surfacein the connection area CA. The third surface S3 may be a surface in theconvex area RA. The first surface S1, the second surface S2, and thethird surface S3 may be integrally coupled with each other.

The first surface S1 may be a lower surface of the barrier structure CSLand be a surface adjacent to the substrate SUB. In an embodiment, thefirst surface S1 may come into contact (e.g., electrical, direct, orphysical contact) with the first electrode ELT1 and the second electrodeELT2.

The second surface S2 may be a sidewall of the barrier structure SCL andbe a surface which encloses sides of the light conversion layer LCL andthe light shielding pattern SDM, which will be described herein below.The first surface S1 and the third surface S3 of the barrier structureCSL may be coupled to each other by the second surface S2.

The second surface S2 may be oriented at an angle to the first surfaceS1. In an embodiment, an obtuse angle formed between the first surfaceS1 and the second surface S2 may be greater than 90° and less than 120°.However, the present disclosure is not limited thereto, and the obtuseangle formed between the first surface S1 and the second surface S2 maybe greater than 120° depending on the process of forming the barrierstructure CSL.

The third surface S3 may be an upper surface of the barrier structureCSL and be a surface spaced apart from the substrate SUB by a distancegreater than is the first surface S1. A first space IS defined by thesubstrate SUB, the second surface S2, and the third surface S3 may beformed between the barrier structure CSL and the substrate SUB.

Portions of the first and second electrodes ELT1 and ELT2 and the lightemitting element LD may be in the first space IS defined between thebarrier structure CSL and the substrate SUB. In an embodiment, the firstspace IS may be sealed by the substrate SUB, the barrier structure CSL,and the passivation layer PSL and filled with air, but the presentdisclosure is not limited thereto. For example, the first space IS maybe filled with other materials.

The third surface S3 may include a hole HP. The hole HP may be an inserthole (e.g., a contact hole) through which the light emitting element LDis inserted into the first space IS between the substrate SUB and thebarrier structure CSL. At least a portion of the hole HP may overlapwith the light emitting element LD with respect to the third directionDR3.

A second space OS may be formed between the barrier structure CSL andthe passivation layer PSL. In more detail, the second space OS may bespace defined by the first surface 51 and the second surface S2 of thebarrier structure CSL. The light conversion layer LCL to be describedherein below may be in the second space OS. The first space IS and thesecond space OS may be alternately located in the first direction DR1.

The light conversion layer LCL may be provided on the substrate SUB. Thelight conversion layer LCL may include a first wavelength conversionpattern LCP1, a second wavelength conversion pattern LCP2, and a lightscattering pattern LCP3. The first wavelength conversion pattern LCP1may be in the first pixel area PXA1. The second wavelength conversionpattern LCP2 may be in the second pixel area PXA2. The light scatteringpattern LCP3 may be in the third pixel area PXA3.

As illustrated in FIG. 5 , the first wavelength conversion pattern LCP1,the second wavelength conversion pattern LCP2, and the light scatteringpattern LCP3 may be spaced apart from each other in the first directionDR1 and extend in the second direction DR2.

The light conversion layer LCL may be formed in the second space OSdefined by the first surface 51 and the second surface S2 of the barrierstructure CSL. The shape of the light conversion layer LCL may bedetermined depending on the shape of the barrier structure CSL.

The first wavelength conversion pattern LCP1, the second wavelengthconversion pattern LCP2, and the light scattering pattern LCP3 each mayinclude base resin BR, and various suitable particles dispersed in thebase resin BR. In more detail, the first wavelength conversion patternLCP1 may include first wavelength conversion particles WC1 dispersed inthe base resin BR. The second wavelength conversion pattern LCP2 mayinclude second wavelength conversion particles WC2 dispersed in the baseresin BR. The light scattering pattern LCP3 may include scatteringparticles SCT dispersed in the base resin BR. The first wavelengthconversion pattern LCP1 and the second wavelength conversion patternLCP2 each may further include scattering particles SCT dispersed in thebase resin BR.

The material of the base resin BR is not particularly limited so long asit is a material having high light transmissivity and excellentdispersion characteristics for the first wavelength conversion particlesWC1, the second wavelength conversion particles WC2, and the scatteringparticles SCT. For example, the base resin BR may include an organicmaterial such as epoxy resin, acrylic resin, cardo resin, and/or imideresin.

The first wavelength conversion particles WC1 of the first wavelengthconversion pattern LCP1 and the second wavelength conversion particlesWC2 of the second wavelength conversion pattern LCP2 may convert a peakwavelength of incident light into another set or specific peakwavelength. In other words, the first wavelength conversion particlesWC1 and the second wavelength conversion particles WC2 may convert thecolor of incident light.

For example, the first wavelength conversion particles WC1 may convertblue light provided from the light emitting element LD into red lightand emit the red light. The second wavelength conversion particles WC2may convert blue light provided from the light emitting element LD intogreen light and emit the green light. In other words, the first pixelarea PXA1 in which the first wavelength conversion pattern LCP1 islocated may be an area which emits red light. The second pixel area PXA2in which the second wavelength conversion pattern LCP2 is located may bean area which emits green light.

Examples of the first wavelength conversion particles WC1 and the secondwavelength conversion particles WC2 may include quantum dots, quantumrods, fluorescent substances, etc. A quantum dot may be particlematerial which emits light having a set or specific wavelength while anelectron makes a transition from the conduction band to the valenceband.

The quantum dot may be a semiconductor nanocrystal material. The quantumdot may have a set or specific bandgap depending on the composition andthe size thereof, and thus, absorb light and then emit light having anintrinsic wavelength. Examples of a semiconductor nanocrystal of quantumdot may include a group IV nanocrystal, a group II-VI compoundnanocrystal, a group III-V compound nanocrystal, a group IV-VInanocrystal, and a combination thereof.

For instance, examples of the group IV nanocrystal may include silicon(Si), germanium (Ge), and a binary compound such as silicon carbide(SiC) and silicon-germanium (SiGe), but the present disclosure is notlimited thereto.

Examples of the group II-VI compound nanocrystal may include binarycompounds such as CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe,MgSe, MgS, and a mixture thereof, ternary compounds such as CdSeS,CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS,CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe,MgZnS, and a mixture thereof, and quanternary compounds such as HgZnTeS,CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS,HgZnSeTe, HgZnSTe, and a mixture thereof. However, the presentdisclosure is not limited thereto.

Examples of the group III-V compound nanocrystal may include binarycompounds such as GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP,InAs, InSb, and a mixture thereof, ternary compounds such as GaNP,GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP,InNAs, InNSb, InPAs, InPSb, GaAlNP, and a mixture thereof, andquanternary compounds such as GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb,GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb,InAlPAs, InAlPSb, and a mixture thereof. However, the present disclosureis not limited thereto.

Examples of the group IV-VI nanocrystal may include binary compoundssuch as SnS, SnSe, SnTe, PbS, PbSe, PbTe, and a mixture thereof, ternarycompounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS,SnPbSe, SnPbTe, and a mixture thereof, and quanternary compounds such asSnPbSSe, SnPbSeTe, SnPbSTe, and a mixture thereof. However, the presentdisclosure is not limited thereto.

The quantum dot may have any suitable shape which is generally used inthe art, and is not particularly limited. For example, a spherical,pyramid-shaped, multi-arm shaped, or cuboid nanoparticle, nanotube,nanowire, nanofiber, and/or nanoplate particle may be used. The binarycompound, the ternary compound, and/or the quaternary compound may bepresent in particles at a substantially uniform concentration, or may bepresent in the same particles with different concentrationdistributions.

The quantum dot may have a core-shell structure including a core havingthe above-mentioned nanocrystal, and a shell which encloses the core. Aninterface between the core and the shell may have a concentrationgradient in which the concentration of elements that are present in theshell decreases in a direction from the surface of the particle to thecenter of the particle. The shell of the quantum dot may function as aprotective layer to prevent or reduce chemical changes to the core sothat semiconductor characteristics may be retained, and/or may functionas a charging layer for assigning electrophoresis characteristics to thequantum dot. The shell may have a single-layer structure or amulti-layer structure. Examples of the shell of the quantum dot mayinclude metallic or nonmetallic oxide, a semiconductor compound, or acombination thereof.

For instance, although examples of the metallic or nonmetallic oxide mayinclude binary compounds such as SiO₂, Al₂O₃, TiO₂, ZnO, MnO, Mn₂O₃,Mn₃O₄, CuO, FeO, Fe₂O₃, Fe₃O₄, CoO, Co₃O₄, and/or NiO, and/or ternarycompounds such as MgAl₂O₄, CoFe₂O₄, NiFe₂O₄, and/or CoMn₂O₄, the presentdisclosure is not limited thereto.

Furthermore, although examples of the semiconductor compound may includeCdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, GaAs, GaP, GaSb, HgS, HgSe,HgTe, InAs, InP, InSb, AlAs, AlP, and AlSb, the present disclosure isnot limited thereto.

Light emitted from the above-mentioned quantum dot may have a full widthat half maximum (FWHM) of an emission wavelength spectrum that isapproximately 45 nm or less. Thereby, the purity and the reproducibilityof a color expressed by the display device may be improved. Furthermore,light emitted from the quantum dot may be emitted in various directionsregardless of a direction of incident light. Therefore, the sidevisibility of the display device may be improved.

The first wavelength conversion particles WC1 and the second wavelengthconversion particles WC2 may be formed of quantum dots. In this case,the diameter of a quantum dot that forms each first wavelengthconversion particle WC1 may be greater than that of a quantum dot thatforms each second wavelength conversion particle WC2. For example, thediameter of the quantum dot that forms the first wavelength conversionparticle WC1 may range from approximately 55 Å to approximately 65 Å,and the diameter of the quantum dot that forms the second wavelengthconversion particle WC2 may range from approximately 40 Å toapproximately 55 Å. However, the present disclosure is not limitedthereto.

The light scattering pattern LCP3 may include scattering particles SCT.Furthermore, as described herein above, the first wavelength conversionpattern LCP1 and the second wavelength conversion pattern LCP2 each mayfurther include scattering particles SCT.

The scattering particles SCT may have a refractive index different fromthat of the base resin BR and form an optical interface with the baseresin BR. The material of each scattering particle SCT is notparticularly limited, so long as it may scatter at least some oftransmitted light. For example, the scattering particle SCT may be madeof an oxide particle such as titanium oxide (TiO₂), zirconium oxide(ZrO₂), aluminum oxide (Al₂O₃), indium oxide (In₂O₃), zinc oxide (ZnO),tin oxide (SnO₂), or silica.

The scattering particle SCT may scatter light in random directionsregardless of a direction of incident light without substantiallyconverting the wavelength of light passing through the light scatteringpattern LCP3. Thereby, the side visibility of the display device may beenhanced.

The light shielding pattern SDM may be provided on the substrate SUB. Asillustrated in FIG. 5 , a plurality of light shielding patterns SDM maybe spaced apart from each other in the first direction DR1 and extend inthe second direction DR2. Each light shielding pattern SDM may belocated along a boundary between the corresponding pixel areas PXA. Inother words, the light shielding pattern SDM may be between the firstwavelength conversion pattern LCP1 and the second wavelength conversionpattern LCP2, between the second wavelength conversion pattern LCP2 andthe light scattering pattern LCP3, or between the light scatteringpattern LCP3 and the first wavelength conversion pattern LCP1.

The light shielding pattern SDM may be in the second space OS of thebarrier structure CSL that is defined by the first surface 51 and thesecond surface S2 that are in the boundary between the correspondingpixel areas PXA.

The light shielding pattern SDM may include light shielding materialcapable of blocking or reducing transmission of light. Each lightshielding pattern SDM may be between the corresponding pixel areas PXA,thus preventing or reducing a light leakage phenomenon or a color mixingphenomenon between adjacent pixels. Furthermore, the light shieldingpattern SDM may include metal or material having high reflectivity sothat the light output efficiency of the display device may be enhanced.

For example, in the case where light emitted from the light emittingelement LD in the first pixel area PXA1 travels toward the second pixelarea PXA2 that is an adjacent pixel area, the light shielding patternSDM between the first pixel area PXA1 and the second pixel area PXA2 mayblock or reduce the amount of the light that travels toward the secondpixel area PXA2. Furthermore, the light shielding pattern SDM mayreflect the light that travels toward the second pixel area PXA2 so thatthe light travels back toward the first pixel area PXA1. Light that isreflected toward the first pixel area XPA1 may be emitted out, in thethird direction DR3 that is the display direction, by a metal layer(e.g., the first and second electrode ELT1 and ELT2) provided in thefirst pixel area PXA1. Hence, the light output efficiency of the firstpixel area PXA1 may be enhanced.

The passivation layer PSL may be provided on the overall area of thesubstrate SUB. The passivation layer PSL may include an organicinsulating layer formed of an organic material or an inorganicinsulating layer formed of an inorganic material.

The passivation layer PSL may cover the light conversion layer LCL. Inother words, the passivation layer PSL may cover the upper surfaces ofthe first wavelength conversion pattern LCP1, the second wavelengthconversion pattern LCP2, and the light scattering pattern LCP3. Thefirst wavelength conversion pattern LCP1, the second wavelengthconversion pattern LCP2, and the light scattering pattern LCP3 may besealed by the barrier structure CSL and the passivation layer PSL. Thesealing structure by the barrier structure CSL and the passivation layerPSL may prevent or reduce deterioration of the first wavelengthconversion particles WC1 in the first wavelength conversion pattern LCP1or the first wavelength conversion particles WC2 in the secondwavelength conversion pattern LCP2.

In an embodiment, the passivation layer PSL may include a protrusionformed in an area in which the passivation layer PSL overlaps with theholes HP formed in the third surface S3 of the barrier structure CSL.The protrusion of the passivation layer PSL may protrude toward thesubstrate SUB so that at least a portion of the hole HP may be filledwith the protrusion.

As described herein above, the light emitting element LD may receive adriving signal from the first electrode ELT1 and the second electrodeELT2 and emit light in response to the driving signal. Light emittedfrom the light emitting element LD may be incident on the lightconversion layer LCL in each pixel area PXA and travel in randomdirections by the internal particles of the light conversion layer LCL.Rays of light that travel in directions other than the third directionDR3 may be reflected by the first electrode ELT1, the second electrodeELT2, and the light shielding pattern SDM that are on the substrate SUB,and thus travel in the third direction DR3.

FIGS. 7 to 9 are sectional views of a pixel unit in accordance withvarious embodiments, corresponding to line A-A′ of FIG. 5 .

The embodiments illustrated in FIGS. 7 to 9 may include components equalor similar to those of the embodiment illustrated in FIG. 6 . Likecomponents will be designated by like reference numerals, andduplicative explanation thereof will be simplified or not repeated here.The following description will be focused on differences between theembodiments.

Unlike the embodiment of FIG. 6 , in an embodiment illustrated in FIG. 7, a pixel unit PXU1 a may further include a color filter layer CFL oneach pixel area PXA.

Referring to FIG. 7 , the pixel unit PXU1 a may further include a colorfilter layer CFL. The color filter layer CFL may be provided on thesubstrate SUB. The color filter layer CFL may include a first colorfilter CF1, a second color filter CF2, and a third color filter CF3. Afirst pixel PXL1 a may include the first color filter CF1. A secondpixel PXL2 a may include the second color filter CF2. A third pixel PXL3a may include the third color filter CF3.

The first color filter CF1 may be in the first pixel area PXA1 and maynot be in the second pixel area PXA2 or the third pixel area PXA3. Thesecond color filter CF2 may be in the second pixel area PXA2 and may notbe in the first pixel area PXA1 or the third pixel area PXA3. The thirdcolor filter CF3 may be in the third pixel area PXA3 and may not be inthe first pixel area PXA1 or the second pixel area PXA2.

As such, although the color filters CF1, CF2, and CF3 may be spacedapart from each other based on the respective pixel areas PXA, thepresent disclosure is not limited thereto. In an embodiment, portions ofthe color filters CF1, CF2, and CF3 may overlap with each other alongthe boundaries of the pixel areas PXA.

Each of the color filters CF1, CF2, and CF3 may allow light having a setor specific wavelength to transmit therethrough while partiallyabsorbing light having the other wavelengths.

For example, the first color filter CF1 may be a red color filter. Inother words, the first color filter CF1 may allow light having a redwavelength to transmit therethrough, and may partially absorb light ofwavelength bands adjacent to the red wavelength, thus making it possibleto sharpen (or narrow) a wavelength spectrum of red light that isexpressed by the first pixel PXL1 a, thereby improving the color purity.

The second color filter CF2 may be a green color filter. The secondcolor filter CF2 may allow light having a green wavelength whilepartially absorbing light of wavelength bands adjacent to the greenwavelength, thus making it possible to sharpen (or narrow) a wavelengthspectrum of green light that is expressed by the second pixel PXL2 a.

The third color filter CF3 may be a blue color filter. The third colorfilter CF3 may allow light having a blue wavelength while partiallyabsorbing light of wavelength bands adjacent to the blue wavelength,thus making it possible to sharpen (or narrow) a wavelength spectrum ofblue light that is expressed by the third pixel PXL3 a.

Therefore, the display device may secure excellent color reproducibilityby the first to third color filters CF1, CF2, and CF3.

Unlike the embodiment of FIG. 7 , in an embodiment illustrated in FIG. 8, a pixel unit PXU1 b may further include a black matrix BM locatedalong the boundary of each pixel area PXA.

Referring to FIG. 8 , the pixel unit PXU1 b may further include a blackmatrix BM, a first pixel PXL1 b, a second pixel PXL2 b, and third pixelPXL3 b. The black matrix BM may be provided on the substrate SUB andlocated along the boundary of each pixel area PXA.

The black matrix BM may be in the second space OS of the barrierstructure CSL that is defined by the first surface 51 and the secondsurface S2 that are in the boundary between the corresponding pixelareas PXA. In an embodiment, the black matrix BM may overlap with thelight shielding pattern SDM.

The black matrix BM may absorb light of all colors that is incident onthe black matrix BM, thus preventing or reducing a light leakagephenomenon and a color mixing phenomenon between adjacent pixels.

Unlike the embodiment of FIG. 6 , in an embodiment illustrated in FIG. 9, a pixel unit PXU1 c may further include an anchoring pattern ANCP on afirst space ISc of each pixel area PXA, and a first pixel PXL1 c, asecond pixel PXL2 c, and third pixel PXL3 c.

Referring to FIG. 9 , the pixel unit PXU1 c may further include ananchoring pattern ANCP in each pixel area PXA.

The anchoring pattern ANCP may be charged into the first space IScformed between the substrate SUB and the barrier structure CSL. Theanchoring pattern ANCP may cover an upper portion of the light emittingelement LD. In an embodiment, the anchoring pattern ANCP may also bebetween the substrate SUB and the light emitting element LD.

The light emitting element LD may be stably fixed on the substrate SUBby the anchoring pattern ANCP. The anchoring pattern ANCP may preventthe light emitting element LD from being removed from the substrate SUBduring a process of manufacturing the display device (or may reduce alikelihood or occurrence of such removal). Consequently, occurrences offailures that may be caused by a removed light emitting element LD maybe prevented or reduced, whereby the reliability of the display devicemay be enhanced.

Although the anchoring pattern ANCP may be completely charged into thefirst space ISc formed by the substrate SUB and the barrier structureCSL, the present disclosure is not limited thereto. In an embodiment,the anchoring pattern ANCP may cover at least a portion of the lightemitting element LD and be charged into only a portion of the firstspace ISc.

The material of the anchoring pattern ANCP is not particularly limited.In an embodiment, the anchoring pattern ANCP may include an organicmaterial.

FIG. 10 is a plan view illustrating a pixel unit in accordance with anembodiment of the present disclosure. FIG. 11 is a schematic sectionalview illustrating the pixel unit in accordance with an embodiment, takenalong line B-B′ of FIG. 10 .

Unlike the embodiments described with reference to FIGS. 5 to 9 , in theembodiment illustrated in FIGS. 10 and 11 , a light conversion layerLCLd may be in the first space IS formed by the substrate SUB and asecond surface S2 and a third surface S3 of a barrier structure CSLd,and the light emitting element LD may be in a second space OS formed bya first surface 51 and the second surface S2 of the barrier structureCSLd. The other configuration of the embodiment illustrated in FIGS. 10and 11 is equal or similar to that of the embodiments described withreference to FIGS. 5 to 9 .

Referring to FIGS. 10 and 11 , a pixel unit PXU2 in accordance with anembodiment may include first to third pixels PXL1 d, PXL2 d, and PXL3 d.The first to third pixels PXL1 d, PXL2 d, and PXL3 d each may include asubstrate SUB, a first electrode ELT1, a second electrode ELT2, a lightemitting element LD, a barrier structure CSLd, a light conversion layerLCLd, a light shielding pattern SDM, and a passivation layer PSL.

The substrate SUB, the first electrode ELT1, the second electrode ELT2,the light emitting element LD, the light shielding pattern SDM, and thepassivation layer PSL are equal or similar to those described hereinabove; therefore, duplicative explanation thereof will not be repeatedhere.

The barrier structure CSLd may be provided on the overall area of thesubstrate SUB. The barrier structure CSLd may be formed of a firstsurface 51, a second surface S2, and the third surface S3.

A first space IS may be formed between the substrate SUB and the barrierstructure CSLd by the substrate SUB and the second surface S2 and thethird surface S3 of the barrier structure CSLd.

A first hole HP1 may be formed in the third surface S3 of the barrierstructure CSLd. The first hole HP1 may be an inlet through which thelight conversion layer LCLd is injected.

The light conversion layer LCLd may be in the first space IS between thebarrier structure CSLd and the substrate SUB. Although the lightconversion layer LCLd in the first space IS is completely charged intothe first space IS, the present disclosure is not limited thereto. Forexample, the light conversion layer LCLd may be partially charged intothe first space IS.

The second space OS defined by the first surface S1 and the secondsurface S2 of the barrier structure CSLd may be formed in the barrierstructure CSLd. The first space IS and the second space OS may bealternately located in the first direction DR1.

At least a portion of the first electrode ELT1 and at least a portion ofthe second electrode ELT2 may be located in the second space OS. Thelight emitting element LD may be between the first electrode ELT1 andthe second electrode ELT2 of the second space OS.

A second hole HP2 may be formed in the first surface 51 of the barrierstructure CSLd. The first electrode ELT1 and the second electrode ELT2may be exposed through the second hole HP2. The light emitting elementLD may be between the first electrode ELT1 and the second electrodeELT2. The light emitting element LD may come into contact (e.g.,electrical, direct, or physical contact) with each of the firstelectrode ELT1 and the second electrode ELT2 in the second space OS andreceive a driving signal from the first electrode ELT1 and the secondelectrode ELT2.

As described herein above, the light conversion layer LCLd may be in thefirst space IS formed between the substrate SUB and the barrierstructure CSLd.

The light conversion layer LCLd may include a first wavelengthconversion pattern LCP1 d, a second wavelength conversion pattern LCP2d, and a light scattering pattern LCP3 d. The first wavelengthconversion pattern LCP1 d may be in the first pixel area PXA1. Thesecond wavelength conversion pattern LCP2 d may be in the second pixelarea PXA2. The light scattering pattern LCP3 d may be in the third pixelarea PXA3.

FIGS. 12 and 13 are sectional views of a pixel unit in accordance withvarious embodiments, corresponding to line B-B′ of FIG. 10 .

Referring to FIG. 12 , the pixel unit PXU2 a may further include a colorfilter layer CFLe. The color filter layer CFLe may be provided on thesubstrate SUB and on the passivation layer PSL.

The color filter layer CFLe may include a first color filter CF1 e, asecond color filter CF2 e, and a third color filter CF3 e. A first pixelPXL1 e may include the first color filter CF1 e. A second pixel PXL2 emay include the second color filter CF2 e. A third pixel PXL3 e mayinclude the third color filter CF3 e.

Therefore, the display device may secure excellent color reproducibilityby the first to third color filters CF1 e, CF2 e, and CF3 e.

The color filter layer CFLe of FIG. 11 may have a configuration similarto that of the color filter layer CFL of FIG. 7 ; therefore, duplicativedescription of the color filter layer CFLe will not be repeated here.

Referring to FIG. 13 , the pixel unit PXU2 b may further include a blackmatrix BMf and a first pixel PXL1 f, a second pixel PXL2 f, and a thirdpixel PXL3 f. There is a difference between an embodiment of FIG. 13 andthe embodiment of FIG. 12 , in that the black matrix BMf is furtherprovided in the embodiment of FIG. 13 . The other configuration of theembodiment of FIG. 13 is equal or similar to that of the embodiment ofFIG. 12 .

The black matrix BMf may be provided on the substrate SUB and on thepassivation layer PSL. The black matrix BMf may be located along theboundary of each of the pixels PXL1 f, PXL2 f, and PXL3 f and providedon the same plane as that of the color filter layer CFL.

The black matrix BMf may prevent or reduce a light leakage phenomenonwhich may occur between the pixels PXL1 f, PXL2 f, and PXL3 f.

The configuration of the black matrix BMf of FIG. 13 may be similar tothat of the black matrix BM of FIG. 8 ; therefore, duplicativedescription of the black matrix BMf will not be repeated here.

In various embodiments of the present disclosure, a light conversionlayer may be at a position level with a light emitting element by abarrier structure, thus improving the efficiency at which light emittedfrom the light emitting element is incident on the light conversionlayer.

The effects of the present disclosure are not limited by the foregoing,and other various effects would be understood to be included within thespirit and scope of the present disclosure.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present disclosure asset forth in the following claims, and equivalents thereof.

What is claimed is:
 1. A display device comprising: a substrate; a firstelectrode and a second electrode on the substrate and spaced apart fromeach other in a first direction; a light emitting element between thefirst electrode and the second electrode; a light conversion layer onthe substrate; and a barrier structure on the substrate and including afirst surface, a second surface, and a third surface, wherein a firstspace defined by the second surface and the third surface is between thesubstrate and the barrier structure, wherein a second space defined bythe first surface and the second surface is in the barrier structure,wherein the first space and the second space are alternately located inthe first direction, wherein the light conversion layer is in the firstspace, and wherein the light emitting element is in the at least onesecond space.
 2. The display device according to claim 1, wherein thefirst surface exposes at least a portion of the first electrode and atleast a portion of the second electrode, and has a first holeoverlapping the light emitting element.
 3. The display device accordingto claim 1, wherein the third surface has a second hole overlapping thelight conversion layer.
 4. The display device according to claim 1,further comprising a passivation layer on the barrier structure, and acolor filter on the passivation layer.
 5. The display device accordingto claim 1, wherein the light conversion layer comprises a base resin,wavelength conversion particles dispersed in the base resin, and lightscattering particles dispersed in the base resin.
 6. The display deviceaccording to claim 1, wherein the first surface is closer to thesubstrate than is the third surface, and the first surface and the thirdsurface are alternately arranged in the first direction.
 7. The displaydevice according to claim 6, wherein the second surface is between thefirst surface and the third surface and couples the first surface withthe third surface.
 8. The display device according to claim 1, furthercomprising a light shielding pattern located along the second surface inthe second space in which the light emitting element is not included,wherein the light shielding pattern includes metal.
 9. The displaydevice according to claim 1, further comprising a black matrixoverlapping the second space in which the light emitting element is noton the barrier structure, the black matrix being configured to absorband block incident light.